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SiC Mosfets

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Gehäusetyp Topologie Sperrspannung [V] RDS on [mOhm] Nennstrom [A] Nennstrom [mA] Nennstrom [25°] Betriebstemperatur[°C] Produkt Feature Produkt Status
GeneSiC G3R60MT07J G3R60MT07J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 750 60 44
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R60MT07D G3R60MT07D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 750 60 43
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R60MT07K G3R60MT07K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 750 60 37
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R12MT12K G3R12MT12K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1200 12 157
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R20MT12K G3R20MT12K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1200 20 100
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R20MT12N G3R20MT12N GeneSiC Diskret SiC Mosfets Aktive Komponenten SOT-227 1200 20 90
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Isolated Back-side
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GeneSiC G3R30MT12J G3R30MT12J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1200 30 85
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R30MT12K G3R30MT12K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1200 30 70
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R40MT12J G3R40MT12J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1200 40 66
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R40MT12D G3R40MT12D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1200 40 63
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R40MT12K G3R40MT12K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1200 40 55
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R75MT12J G3R75MT12J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1200 75 38
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R75MT12D G3R75MT12D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1200 75 36
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R75MT12K G3R75MT12K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1200 75 31
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R160MT12J G3R160MT12J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1200 160 19
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R160MT12D G3R160MT12D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1200 160 19
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R350MT12J G3R350MT12J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1200 350 10
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R350MT12D G3R350MT12D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1200 350 10
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R20MT17K G3R20MT17K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1700 20 95
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness

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GeneSiC G3R20MT17N G3R20MT17N GeneSiC Diskret SiC Mosfets Aktive Komponenten SOT-227 1700 20 84
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Isolated Back-side
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GeneSiC G3R45MT17D G3R45MT17D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1700 45 52
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness

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GeneSiC G3R45MT17K G3R45MT17K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1700 45 46
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness

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GeneSiC G3R160MT17J G3R160MT17J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1700 160 18
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Optimized Package with seperate Driver Source Pin

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GeneSiC G3R160MT17D G3R160MT17D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1700 160 17
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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GeneSiC G3R450MT17J G3R450MT17J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1700 450 8
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Optimized Package with seperate Driver Source Pin

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GeneSiC G3R450MT17D G3R450MT17D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1700 450 7
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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GeneSiC G2R1000MT17J G2R1000MT17J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1700 1000 5
-G2R™ Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Optimized Package with seperate Driver Source Pin

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GeneSiC G2R1000MT17D G2R1000MT17D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1700 1000 5
-G2R™ Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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GeneSiC G2R50MT33K G2R50MT33K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 3300 50 63
-Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Normally Off-stable Temperature upto 175°C -Optimized Package with seperate Driver Source Pin
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GeneSiC G2R120MT33J G2R120MT33J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 3300 120 33
-Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Normally Off-stable Temperature upto 175°C -Optimized Package with seperate Driver Source Pin
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GeneSiC G2R1000MT33J G2R1000MT33J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 3300 1000 5
-Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Normally Off-stable Temperature upto 175°C -Optimized Package with seperate Driver Source Pin
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No Image G3R10MT07-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 750 10 100 100000
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R10MT07-CAU GeneSiC Bare Die SiC Mosfets Aktive Komponenten 750 10 100 100000
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G4R10MT12-CAU GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1200 10 120 120000
-G4R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G4R10MT12-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1200 10 120 120000
-G4R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R12MT12-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1200 12 100 100000
-G3R™ (3rd Generation) Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R20MT12-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1200 20 60 60000
-G3R™ (3rd Generation) Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R30MT12-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1200 30 45 45000
-G3R™ (3rd Generation) Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R20MT17-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1700 20 75 75000
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R45MT17-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1700 45 35 35000
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G2R50MT33-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 3300 50 50 50000
-Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Normally Off-stable temperature up to 175° C -Industry-Leading UIL and short-Circuit Robustness
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No Image G2R300MT65-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 6500 300 10 10000
-G2R™ Technology with +20 V / -5 V Gate Drive -Superior QG X RDS (ON) Figure of Merit -Low Capacitances and Low gate charge -Normally Off-stable operation up to 175° C -Fast and reliable body Diode -High Avalanche and short circuit Ruggedness -Low condition Losses at High Temperature
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No Image G2R325MS65-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 6500 325 10 10000
-G2R™ Technology with +20 V / -5 V Gate Drive -Superior QG X RDS (ON) Figure of Merit -Low Capacitances and Low gate charge -Normally Off-stable operation up to 175° C -Fast and Reliable Integrated Schottky Diode -High Avalanche and short circuit Ruggedness -Low condition Losses at High Temperature
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No Image GP2T020A120X-SBT SemiQ Bare Die SiC Mosfets Aktive Komponenten sawn on blue tape 1200 20
in production
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SemiQ GP2T020A120X GP2T020A120X SemiQ Bare Die SiC Mosfets Aktive Komponenten unsawn wafer 1200 20
in production
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No Image GP2T040A120X-SBT SemiQ Bare Die SiC Mosfets Aktive Komponenten sawn on blue tape 1200 40
in production
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SemiQ GP2T040A120X GP2T040A120X SemiQ Bare Die SiC Mosfets Aktive Komponenten unsawn wafer 1200 40
in production
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No Image GP2T080A120X-SBT SemiQ Bare Die SiC Mosfets Aktive Komponenten sawn on blue tape 1200 80
in production
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SemiQ GP2T080A120X GP2T080A120X SemiQ Bare Die SiC Mosfets Aktive Komponenten unsawn wafer 1200 80
in production
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No Image GP2T020A120U SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-3L Discrete 1200 20 119 0,119 86
in production
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SemiQ GP2T020A120H GP2T020A120H SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-4L Discrete 1200 20 119 0,119 86 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 800mJ* • Driver source pin for gate driving
 in production
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SemiQ GP2T040A120U GP2T040A120U SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-3L Discrete 1200 37 63 0,063 47 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ*
 in production
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SemiQ GP2T040A120H GP2T040A120H SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-4L Discrete 1200 37 63 0,063 47 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving
 in production
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SemiQ GP2T040A120J GP2T040A120J SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-7L Discrete 1200 38 66 0,066 49 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving
 in production
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SemiQ GP2T080A120U GP2T080A120U SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-3L Discrete 1200 77 35 0,035 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 200mJ*
 in production
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SemiQ GP2T080A120H GP2T080A120H SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-4L Discrete 1200 77 35 0,035 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving • Increased creepage due to notched design
 in production
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SemiQ GP2T080A120J GP2T080A120J SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-7L Discrete 1200 77 35 0,035 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving
 in production
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SemiQ GCMS010B120S1-E1 GCMS010B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 9 218 0,218 157 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX010B120S1-E1 GCMX010B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 10 202 0,202 146 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMS080B120S1-E1 GCMS080B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 77 30 0,03 22 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling diode with zero reverse recovery SiC SBDs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMS040B120S1-E1 GCMS040B120S1-E1 SemiQ SiC Module SiC Mosfets Aktive Komponenten SOT-227 Module 1200 37 57 0,057 42 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX040B120S1-E1 GCMX040B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 40 57 0,057 42 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX080B120S1-E1 GCMX080B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 80 30 0,03 22 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMS020B120S1-E1 GCMS020B120S1-E1 SemiQ SiC Module SiC Mosfets Aktive Komponenten SOT-227 Module 1200 20 113 0,113 81 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX020B120S1-E1 GCMX020B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 20 113 0,113 81 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX020A120B2B1P GCMX020A120B2B1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B2 Half Bridge Module 1200 19 102 0,102 89 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX010A120B2B1P GCMX010A120B2B1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B2 Half Bridge Module 1200 9 214 0,214 186 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX010A120B3B1P GCMX010A120B3B1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Half Bridge Module 1200 9 173 0,173 151 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX005A120B3B1P GCMX005A120B3B1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Half Bridge Module 1200 4,4 383 0,383 331 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX040A120B3H1P GCMX040A120B3H1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Full Bridge Module 1200 38 53 0,053 46 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX020A120B3H1P GCMX020A120B3H1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Full Bridge Module 1200 18,1 93 0,093 81 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX020A120B2H1P GCMX020A120B2H1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B2 Full Bridge Module 1200 18 102 0,102 88 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Anfragen
SemiQ GCMX040A120B2H1P GCMX040A120B2H1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Full Bridge Module 1200 38 56 0,056 49 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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Scroll

SiC Dioden

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Gehäusetyp Topologie Nennspannung[Vdc] Nennstrom [A] Nennstrom [mA] Abmessungen L [mm] Abmessungen W/D [mm] Produkt Feature Produkt Status
SemiQ GP3D006A065X-SBT GP3D006A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 6 0,006 1,37 1,37
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D008A065X-SBT GP3D008A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 8 0,008 1,54 1,54
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D010A065X-SBT GP3D010A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 10 0,01 1,78 1,78
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D012A065X-SBT GP3D012A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 12 0,012 1,5 2,9
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D020A065X-SBT GP3D020A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 20 0,02 2,39 2,39
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D030A065X-SBT GP3D030A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 30 0,03 2,86 2,86
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D050A065X-SBT GP3D050A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 50 0,05 3,5 3,5
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D010A120X-SBT GP3D010A120X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1200 10 0,01 2,4 2,4
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D015A120X-SBT GP3D015A120X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1200 15 0,015 2,12 4,1
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D020A120X-SBT GP3D020A120X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1200 20 0,02 3,25 3,25
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D030A120X-SBT GP3D030A120X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1200 30 0,03 3,9 3,9
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D050A120X-SBT GP3D050A120X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1200 50 0,05 4,93 4,93
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D005A170X-SBT GP3D005A170X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1700 5 0,005 2,4 2,4
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D010A170X-SBT GP3D010A170X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1700 10 0,01 2,91 2,91
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D020A170X-SBT GP3D020A170X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1700 20 0,02 3,95 3,95
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D006A065A GP3D006A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 6 0,006
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 29mJ • All parts tested to greater than 715V
 in production
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No Image GP3D006A065D SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-263 650 6 0,006
in production
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SemiQ GP3D008A065A GP3D008A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 8 0,008
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D008A065D GP3D008A065D SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-263 650 8 0,008
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V
 in production
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SemiQ GP3D010A065A GP3D010A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D010A065B GP3D010A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D010A065D GP3D010A065D SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-263 650 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D012A065A GP3D012A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 12 0,012
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D012A065B GP3D012A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 12 0,012
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ
 in production
Anfragen
SemiQ GP3D020A065A GP3D020A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D020A065B GP3D020A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D030A065B GP3D030A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 30 0,03
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ
 in production
Anfragen
SemiQ GP3D050A065B GP3D050A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 50 0,05
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 333mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D020A065U GP3D020A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D024A065U GP3D024A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 24 0,024
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ per leg
 in production
Anfragen
SemiQ GP3D040A065U GP3D040A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 40 0,04
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D010A120A GP3D010A120A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1200 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D010A120B GP3D010A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D015A120A GP3D015A120A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1200 15 0,015
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D015A120B GP3D015A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 15 0,015
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D020A120A GP3D020A120A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1200 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D020A120B GP3D020A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D030A120B GP3D030A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 30 0,03
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ • All parts tested to greater than 1400V
 in production
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No Image GP3D040A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 40 0,04
in production
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SemiQ GP3D050A120B GP3D050A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 50 0,05
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 666mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D020A120U GP3D020A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D030A120U GP3D030A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 30 0,03
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D040A120U GP3D040A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 40 0,04
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D060A120U GP3D060A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 60 0,06
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D005A170B GP3D005A170B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1700 5 0,005
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 145mJ
 in production
Anfragen
SemiQ GP3D010A170B GP3D010A170B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1700 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 350mJ • All parts tested to greater than 1870V • High forward surge current
 in production
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No Image GP3D020A170A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1700 20 0,02
in production
Anfragen
SemiQ GP3D020A170B GP3D020A170B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1700 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 600mJ • All parts tested to greater than 1870V
 in production
Anfragen
SemiQ GP3D016A065U GP3D016A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 16 0,016
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ per leg • All parts tested to greater than 715V
 in production
Anfragen
No Image GP3D006A065F SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220FP-2L 650 6 0,006
in production
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No Image GP3D008A065F SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220FP-2L 650 8 0,008
in production
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SemiQ GHXS010A060S-D3 GHXS010A060S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 600 10 0,01
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Anfragen
SemiQ GHXS020A060S-D3 GHXS020A060S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 600 20 0,02
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Anfragen
SemiQ GHXS030A060S-D3 GHXS030A060S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 600 30 0,03
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 700V
in production
Anfragen
SemiQ GHXS030A060S-D1E GHXS030A060S-D1E SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Rectifier Bridge 600 30 0,03
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Anfragen
SemiQ GHXS050A060S-D3 GHXS050A060S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 600 50 0,05
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Anfragen
SemiQ GHXS050B065S-D3 GHXS050B065S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 650 50 0,05
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Anfragen
SemiQ GHXS100B065S-D3 GHXS100B065S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 650 100 0,1
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Anfragen
SemiQ GHXS015A120S-D1 GHXS015A120S-D1 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Rectifier Bridge 1200 15 0,015
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Anfragen
SemiQ GHXS015A120S-D3 GHXS015A120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 15 0,015
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Anfragen
SemiQ GHXS030A120S-D3 GHXS030A120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 30 0,03
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Anfragen
SemiQ GHXS030A120S-D1E GHXS030A120S-D1E SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Rectifier Bridge 1200 30 0,03
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Anfragen
SemiQ GHXS045A120S-D3 GHXS045A120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 45 0,045
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Anfragen
SemiQ GHXS050B120S-D3 GHXS050B120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 50 0,05
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Anfragen
SemiQ GHXS060A120S-D3 GHXS060A120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 60 0,06
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation
in production
Anfragen
SemiQ GHXS100B120S-D3 GHXS100B120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 100 0,1
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Anfragen
SemiQ GHXS300A120S7D5 GHXS300A120S7D5 SemiQ SiC Module SiC Dioden Aktive Komponenten S7 Half Bridge 1200 300 0,3
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Anfragen
SemiQ GHXS400A120S7D5 GHXS400A120S7D5 SemiQ SiC Module SiC Dioden Aktive Komponenten S7 Half Bridge 1200 400 0,4
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
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Scroll

IGBT

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Gehäusetyp Sperrspannung [V] Nennstrom [A] Nennstrom [mA] Betriebstemperatur[°C] Produkt Feature
No Image GK10PI60C6H Silver Micro Module IGBT Aktive Komponenten C6 600 10 0,01 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
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No Image GK10PI60T5H Silver Micro Module IGBT Aktive Komponenten T5 600 10 0,01 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT10RFF120B2H Silver Micro Module IGBT Aktive Komponenten B2 1200 10 0,01 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT10PI120B3H Silver Micro Module IGBT Aktive Komponenten B3 1200 10 0,01 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT10PI120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 10 0,01 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT10PI120B2H Silver Micro Module IGBT Aktive Komponenten B2 1200 10 0,01 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT10FF120C6H Silver Micro Module IGBT Aktive Komponenten C6 1200 10 0,01 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT10PI120C6H Silver Micro Module IGBT Aktive Komponenten C6 1200 10 0,01 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT10PI120B2FH Silver Micro Module IGBT Aktive Komponenten B2F 1200 10 0,01 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT15PI120B2FH Silver Micro Module IGBT Aktive Komponenten B2F 1200 15 0,015 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT15PI120B3H Silver Micro Module IGBT Aktive Komponenten B3 1200 15 0,015 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOATested(2×Ic) - Low Stray Inductance - Lead Free,Compliant with RoHS Requirement
Anfragen
No Image GT15FF120C6H Silver Micro Module IGBT Aktive Komponenten C6 1200 15 0,015 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT15PI120C6H Silver Micro Module IGBT Aktive Komponenten C6 1200 15 0,015 25 to 150
- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT15PI120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 15 0,015 25 to 150
Short Circuit Rated >10μs - Low Saturation Voltage: VCE (sat) = 1.90V @ IC = 15A , TC=25℃ - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT15FF120A1H Silver Micro Module IGBT Aktive Komponenten A1 1200 15 0,015 25 to 150
Short Circuit Rated >10μs - Low Saturation Voltage: VCE (sat) = 1.90V @ IC = 15A , TC=25℃ - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK20PI60B2FH Silver Micro Module IGBT Aktive Komponenten B2F 600 20 0,02 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK20PI60C6H Silver Micro Module IGBT Aktive Komponenten C6 600 20 0,02 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK20PI60T5H Silver Micro Module IGBT Aktive Komponenten T5 600 20 0,02 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT25FF120B3H Silver Micro Module IGBT Aktive Komponenten B3 1200 25 0,025 25 to 150
Trench & Field Stop IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT25PI120B9H Silver Micro Module IGBT Aktive Komponenten B9 1200 25 0,025 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT25PI120C6H Silver Micro Module IGBT Aktive Komponenten C6 1200 25 0,025 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT25PI120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 25 0,025 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK30PI60B9H Silver Micro Module IGBT Aktive Komponenten B9 600 30 0,03 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK30PI60B3H Silver Micro Module IGBT Aktive Komponenten B3 600 30 0,03 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK30FF60C6H Silver Micro Module IGBT Aktive Komponenten C6 600 30 0,03 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK35FF60A1H Silver Micro Module IGBT Aktive Komponenten A1 600 35 0,035 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK35PI60T5H Silver Micro Module IGBT Aktive Komponenten T5 600 35 0,035 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK35FB60A1H Silver Micro Module IGBT Aktive Komponenten A1 600 35 0,035 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT35PI120B9H Silver Micro Module IGBT Aktive Komponenten B9 1200 35 0,035 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT35FF120C6H Silver Micro Module IGBT Aktive Komponenten C6 1200 35 0,035 25 to 175
- Trench & Field Stop IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT40HF120T1VH Silver Micro Module IGBT Aktive Komponenten T1V 1200 40 0,04 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT40FB120A1H Silver Micro Module IGBT Aktive Komponenten A1 1200 40 0,04 25 to 150
Trench & Field Stop IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT40FF120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 40 0,04 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT40PI120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 40 0,04 25 to 150
Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT40RFF120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 40 0,04 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT40FF120B3H Silver Micro Module IGBT Aktive Komponenten B3 1200 40 0,04 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK50FF60A1H Silver Micro Module IGBT Aktive Komponenten A1 600 50 0,05 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT50FF65B2H Silver Micro Module IGBT Aktive Komponenten B2 650 50 0,05 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT50FF120A1H Silver Micro Module IGBT Aktive Komponenten A1 1200 50 0,05 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF50HH120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 50 0,05 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT50PI120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 50 0,05 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT50FF120B9H Silver Micro Module IGBT Aktive Komponenten B9 1200 50 0,05 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT50FF120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 50 0,05 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF50HF120T1VH Silver Micro Module IGBT Aktive Komponenten T1V 1200 50 0,05 25 to 150
NPT Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF75HF60T1VH Silver Micro Module IGBT Aktive Komponenten T1V 600 75 0,075 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75CU170T1VH Silver Micro Diskret IGBT Aktive Komponenten T1V 1700 75 0,075 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK75FF60A1H Silver Micro Module IGBT Aktive Komponenten A1 600 75 0,075 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK75FF60T5H Silver Micro Module IGBT Aktive Komponenten T5 600 75 0,075 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK75PI60T6H Silver Micro Module IGBT Aktive Komponenten T6 600 75 0,075 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK75HF60T1VH Silver Micro Module IGBT Aktive Komponenten T1V 600 75 0,075 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GTM75FF120B9H Silver Micro Module IGBT Aktive Komponenten B9 1200 75 0,075 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF75HF120T1H Silver Micro Module IGBT Aktive Komponenten T1 1200 75 0,075 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75HF120T1H Silver Micro Module IGBT Aktive Komponenten T1 1200 75 0,075 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75HF120T1NH Silver Micro Module IGBT Aktive Komponenten T1N 1200 75 0,075 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated > 10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF75HH120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 75 0,075 25 to 150
NPT Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75FF120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 75 0,075 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75FF120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 75 0,075 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75PI120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 75 0,075 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75FF120B9H Silver Micro Module IGBT Aktive Komponenten B9 1200 75 0,075 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF75HF120T1VH Silver Micro Module IGBT Aktive Komponenten T1V 1200 75 0,075 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75CU120T1VH Silver Micro Diskret IGBT Aktive Komponenten T1V 1200 75 0,075 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75HF120T1VH Silver Micro Module IGBT Aktive Komponenten T1V 1200 75 0,075 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF100HF60T1VH Silver Micro Module IGBT Aktive Komponenten T1V 600 100 0,1 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK100HF60T1VH Silver Micro Module IGBT Aktive Komponenten T1V 600 100 0,1 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100CL120T1VH Silver Micro Diskret IGBT Aktive Komponenten T1V 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK100PI60T6H Silver Micro Module IGBT Aktive Komponenten T6 600 100 0,1 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GTM100TL65B9H Silver Micro Module IGBT Aktive Komponenten B9 650 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF100HF120T1NH Silver Micro Module IGBT Aktive Komponenten T1N 1200 100 0,1 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100HF120T1NH Silver Micro Module IGBT Aktive Komponenten T1N 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100CU120B5H Silver Micro Diskret IGBT Aktive Komponenten B5 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100SG120B5H Silver Micro Module IGBT Aktive Komponenten B5 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated > 10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100FF120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100FF120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100PI120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF100HF120T1VH Silver Micro Module IGBT Aktive Komponenten T1V 1200 100 0,1 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100CU120T1VH Silver Micro Diskret IGBT Aktive Komponenten T1V 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100HF120T1VH Silver Micro Module IGBT Aktive Komponenten T1V 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100TD120T1VH Silver Micro Module IGBT Aktive Komponenten T1V 1200 100 0,1 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF100HF120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 100 0,1 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free,Compliant with RoHS Requirement
Anfragen
No Image GTR150HF65T1VH Silver Micro Module IGBT Aktive Komponenten T1V 650 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150CU65T1VH Silver Micro Diskret IGBT Aktive Komponenten T1V 650 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150HF65T1VH Silver Micro Module IGBT Aktive Komponenten T1V 650 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GTR150TL65T2SH Silver Micro Module IGBT Aktive Komponenten T2S 650 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150HF120T1VH Silver Micro Module IGBT Aktive Komponenten T1V 1200 150 0,15 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150CL120T1VH Silver Micro Diskret IGBT Aktive Komponenten T1V 1200 150 0,15 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF150CU120T2VH Silver Micro Diskret IGBT Aktive Komponenten T2V 1200 150 0,15 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF150HF120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 150 0,15 25 to 150
NPT Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Req
Anfragen
No Image GT150CU120T2VH Silver Micro Diskret IGBT Aktive Komponenten T2V 1200 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150HF170T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1700 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK150HF60T1VH Silver Micro Module IGBT Aktive Komponenten T1V 600 150 0,15 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GTM150TL65B9H Silver Micro Module IGBT Aktive Komponenten B9 650 150 0,15 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150HF120T1NH Silver Micro Module IGBT Aktive Komponenten T1N 1200 150 0,15 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150CU120T1VH Silver Micro Diskret IGBT Aktive Komponenten T1V 1200 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF150HF120A5H Silver Micro Module IGBT Aktive Komponenten A5 1200 150 0,15 25 to 150
- NPT IGBT Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150TT120A8H Silver Micro Module IGBT Aktive Komponenten A8 1200 150 0,15 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150CE120T1H Silver Micro Module IGBT Aktive Komponenten T1 1200 150 0,15 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF150HH120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 150 0,15 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150CZ120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150FF120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150PI120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150HF120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150HF170T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1700 150 0,15 25 to 175
Short Circuit Rated ＞10μs - Low Saturation Voltage: VCE (sat) = 2.30V @ IC = 150A , TC=25℃ - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF200CU120T2VH Silver Micro Diskret IGBT Aktive Komponenten T2V 1200 200 0,2 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF200HF120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 200 0,2 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement

Anfragen
No Image GK200HF60T1VH Silver Micro Module IGBT Aktive Komponenten T1V 600 200 0,2 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GTR200HF65T1VH Silver Micro Module IGBT Aktive Komponenten T1V 650 200 0,2 25 to 175
Field Stop Trench Gate IGBT - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GTR200TL65T2SH Silver Micro Module IGBT Aktive Komponenten T2S 650 200 0,2 25 to 175
Short Circuit Rated 10μs - Low Saturation Voltage: VCE (Sat) =1.60V IC= 200A,TC=25℃ - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - HI-REL Power Terminals - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200TL65A8H Silver Micro Module IGBT Aktive Komponenten A8 650 200 0,2 25 to 175
Short Circuit Rated 10μs - Low Saturation Voltage: VCE (Sat) =1.60V IC= 200A,TC=25℃ - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - HI-REL Power Terminals - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200FF65T6H Silver Micro Module IGBT Aktive Komponenten T6 650 200 0,2 25 to 175
Short Circuit Rated 10μs - Low Saturation Voltage: VCE (Sat) =1.60V IC= 200A,TC=25℃ - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - HI-REL Power Terminals - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200CE120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 200 0,2 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200FF120A8H Silver Micro Module IGBT Aktive Komponenten A8 1200 200 0,2 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200TT120A8H Silver Micro Module IGBT Aktive Komponenten A8 1200 200 0,2 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200HF120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 200 0,2 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200CZ120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 200 0,2 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200FF120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 200 0,2 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200CU120T2VH Silver Micro Diskret IGBT Aktive Komponenten T2V 1200 200 0,2 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200HF120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 200 0,2 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200TD120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 200 0,2 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GTR300TL65T2SH Silver Micro Module IGBT Aktive Komponenten T2S 650 300 0,3 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated > 10ps - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2xIc) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF300HF120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 300 0,3 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free,Compliant with RoHS Requirement
Anfragen
No Image GF300CE120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 300 0,3 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free,Compliant with RoHS Requirement
Anfragen
No Image GF300CU120T2VH Silver Micro Diskret IGBT Aktive Komponenten T2V 1200 300 0,3 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF300HF120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 300 0,3 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF300CL120T2VH Silver Micro Diskret IGBT Aktive Komponenten T2V 1200 300 0,3 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300CE120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 300 0,3 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300HF120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 300 0,3 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300TL120A8H Silver Micro Module IGBT Aktive Komponenten A8 1200 300 0,3 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - VCE(sat) with Positive Temperature Coefficient - Reliable Mechanical Design with Injection Moulded Terminals and Reliable Internal Connections - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300TT120A8H Silver Micro Module IGBT Aktive Komponenten A8 1200 300 0,3 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300CH120T9H Silver Micro Diskret IGBT Aktive Komponenten T9 1200 300 0,3 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Copper Wire Bonding on Power Terminal - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300HF120T9H Silver Micro Module IGBT Aktive Komponenten T9 1200 300 0,3 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300CL120T2VH Silver Micro Diskret IGBT Aktive Komponenten T2V 1200 300 0,3 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300CU120T2VH Silver Micro Diskret IGBT Aktive Komponenten T2V 1200 300 0,3 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300HF120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 300 0,3 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300TD120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 300 0,3 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300HF170T9H Silver Micro Module IGBT Aktive Komponenten T9 1700 300 0,3 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300HF170T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1700 300 0,3 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400HF65T2NH Silver Micro Module IGBT Aktive Komponenten T2N 650 400 0,4 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400DC120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 400 0,4 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF400SD120T2ZH Silver Micro Diskret IGBT Aktive Komponenten T2Z 1200 400 0,4 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400HF65T2VH Silver Micro Module IGBT Aktive Komponenten T2V 650 400 0,4 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400SD65T2ZH Silver Micro Diskret IGBT Aktive Komponenten T2Z 650 400 0,4 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GTR400HF65A5H Silver Micro Module IGBT Aktive Komponenten A5 650 400 0,4 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>5μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400HF120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 400 0,4 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400TT120A8H Silver Micro Module IGBT Aktive Komponenten A8 1200 400 0,4 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Mixed Voltage Component Topology - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400HF120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 400 0,4 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400SD120T2ZH Silver Micro Diskret IGBT Aktive Komponenten T2Z 1200 400 0,4 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400HF170T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1700 400 0,4 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated ＞ 10μs - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT450CE120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 450 0,45 25 to 175
- Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT450CL120T2NH Silver Micro Diskret IGBT Aktive Komponenten T2N 1200 450 0,45 25 to 175
- Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT450HF65T9H Silver Micro Module IGBT Aktive Komponenten T9 650 450 0,45 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT450CU120T2NH Silver Micro Diskret IGBT Aktive Komponenten T2N 1200 450 0,45 25 to 175
- Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT450HF120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 450 0,45 25 to 175
- Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT450CH120T9H Silver Micro Diskret IGBT Aktive Komponenten T9 1200 450 0,45 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Copper Wire Bonding on Power Terminal - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT450HF120T9H Silver Micro Module IGBT Aktive Komponenten T9 1200 450 0,45 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT450HF120A4H Silver Micro Module IGBT Aktive Komponenten A4 1200 450 0,45 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT600SD170T2ZH Silver Micro Diskret IGBT Aktive Komponenten T2Z 1700 600 0,6 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT600HF65T2NH Silver Micro Module IGBT Aktive Komponenten T2N 650 600 0,6 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT600HF65T9H Silver Micro Module IGBT Aktive Komponenten T9 650 600 0,6 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF600SD120T2ZH Silver Micro Diskret IGBT Aktive Komponenten T2Z 1200 600 0,6 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT600SD120T2ZH Silver Micro Diskret IGBT Aktive Komponenten T2Z 1200 600 0,6 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated> 10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT600CH120T9H Silver Micro Diskret IGBT Aktive Komponenten T9 1200 600 0,6 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT600HF120T9H Silver Micro Module IGBT Aktive Komponenten T9 1200 600 0,6 25 to 175
- Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT600HF170T9H Silver Micro Module IGBT Aktive Komponenten T9 1700 600 0,6 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT800SD65T2ZH Silver Micro Diskret IGBT Aktive Komponenten T2Z 650 800 0,8 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requiremen
Anfragen
No Image GT900SD120T2ZH Silver Micro Diskret IGBT Aktive Komponenten T2Z 1200 900 0,9 25 to 175
Field Stop Trench Gate IGBTShort Circuit Rated>10us - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2xIc) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
Scroll

Si Thyristoren

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Sperrspannung [V] Nennstrom [A] Nennstrom [mA] Produkt Feature Produkt Status
Techsem Y24KPA Y24KPA Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 400 600 0,6
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem Y30KPA Y30KPA Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 400 1000 1
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem Y38KPA Y38KPA Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 400 1500 1,5
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem Y24KPC Y24KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 500 0,5
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem Y30KPC Y30KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 1000 1
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem Y38KPC Y38KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 1500 1,5
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem Y50KPC Y50KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 2500 2,5
In Production
Anfragen
Techsem Y65KPC Y65KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 3000 3
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem Y76KPC Y76KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 4000 4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem Y24KPE Y24KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 400 0,4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem Y30KPE Y30KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 600 0,6
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem Y38KPE Y38KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 1000 1
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem Y50KPE Y50KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 1800 1,8
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem Y65KPE Y65KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 2800 2,8
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem Y76KPE Y76KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 4000 4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem H38KPR H38KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 400 0,4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem H50KPR H50KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 900 0,9
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
No Image H65KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 1600 1,6
In Production
Anfragen
Techsem H89KPR H89KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 2200 2,2
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem H100KPR H100KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 3500 3,5
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem H125KPR H125KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 5200 5,2
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem Y50KPJ Y50KPJ Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 3000 to 4200 1200 1,2
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem Y65KPJ Y65KPJ Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 3000 to 4200 1900 1,9
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem Y76KPJ Y76KPJ Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 3000 to 4200 2400 2,4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Anfragen
Techsem Y30KKE Y30KKE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 400 0,4
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Anfragen
Techsem Y38KKE Y38KKE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 800 0,8
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Anfragen
Techsem Y50KKE Y50KKE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 1300 1,3
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Anfragen
Techsem Y65KKE Y65KKE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 2000 2
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Anfragen
Techsem Y76KKE Y76KKE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 2700 2,7
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Anfragen
Techsem Y70KKG Y70KKG Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 2000 to 2800 2100 2,1
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Anfragen
Techsem Y76KKG Y76KKG Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 2000 to 2800 2700 2,7
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Anfragen
Techsem Y89KKG Y89KKG Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 2000 to 2800 3800 3,8
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Anfragen
Techsem Y100KKG Y100KKG Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 2000 to 2800 4800 4,8
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Anfragen
Techsem MTC26 MTC26 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 26 0,026
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MTC40 MTC40 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 40 0,04
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MTC55 MTC55 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 55 0,055
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MTC70 MTC70 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 70 0,07
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MTC90 MTC90 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 90 0,09
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MTC110 MTC110 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 110 0,11
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MTC135 MTC135 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 135 0,135
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MTC160 MTC160 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 160 0,16
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MTC182 MTC182 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 182 0,182
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MTC200 MTC200 Techsem Module Si Thyristoren Aktive Komponenten 2000 to 2500 200 0,2
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MTC250 MTC250 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 2500 250 0,25
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MTC285 MTC285 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 285 0,285
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MTC500 MTC500 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 500 0,5
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MTC570 MTC570 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 570 0,57
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem Mt500 Mt500 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 400 0,4
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem Mt400 Mt400 Techsem Module Si Thyristoren Aktive Komponenten 2000 to 2500 400 0,4
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
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Si Dioden

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Sperrspannung [V] Nennstrom [A] Nennstrom [mA] Produkt Feature Produkt Status
Techsem Y24ZPA Y24ZPA Techsem Scheibenzelle Si Dioden Aktive Komponenten 400 1000 1
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Anfragen
Techsem Y30ZPA Y30ZPA Techsem Scheibenzelle Si Dioden Aktive Komponenten 400 1460 1,46
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Anfragen
Techsem Y38ZPA Y38ZPA Techsem Scheibenzelle Si Dioden Aktive Komponenten 400 1990 1,99
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Anfragen
Techsem Y50ZPA Y50ZPA Techsem Scheibenzelle Si Dioden Aktive Komponenten 400 6300 6,3
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Anfragen
Techsem Y65ZPA Y65ZPA Techsem Scheibenzelle Si Dioden Aktive Komponenten 400 8500 8,5
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Anfragen
Techsem Y24ZPC Y24ZPC Techsem Scheibenzelle Si Dioden Aktive Komponenten 1200 to 2000 600 0,6
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Anfragen
Techsem Y30ZPC Y30ZPC Techsem Scheibenzelle Si Dioden Aktive Komponenten 1200 to 2000 1310 1,31
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Anfragen
Techsem Y38ZPC Y38ZPC Techsem Scheibenzelle Si Dioden Aktive Komponenten 1200 to 2000 1680 1,68
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Anfragen
Techsem Y50ZPC Y50ZPC Techsem Scheibenzelle Si Dioden Aktive Komponenten 1200 to 2000 3000 3
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Anfragen
Techsem Y76ZPC Y76ZPC Techsem Scheibenzelle Si Dioden Aktive Komponenten 1200 to 2000 6000 6
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Anfragen
Techsem MDC26 MDC26 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 26 0,026
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC40 MDC40 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 40 0,04
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC55 MDC55 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 55 0,055
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC70 MDC70 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 70 0,07
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC90 MDC90 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 90 0,09
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC110 MDC110 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 110 0,11
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC135 MDC135 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 135 0,135
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC160 MDC160 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 160 0,16
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC182 MDC182 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 182 0,182
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC200 MDC200 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 200 0,2
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC250 MDC250 Techsem Module Si Dioden Aktive Komponenten 1200 to 2500 250 0,25
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC300 MDC300 Techsem Module Si Dioden Aktive Komponenten 1200 to 2500 300 0,3
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC500 MDC500 Techsem Module Si Dioden Aktive Komponenten 1200 to 2500 500 0,5
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC570 MDC570 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 570 0,57
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MD500 MD500 Techsem Module Si Dioden Aktive Komponenten 1200 to 2500 400 0,4
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
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Thyristor-Dioden-Module

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Sperrspannung [V] Nennstrom [A] Nennstrom [mA] Produkt Feature Produkt Status
Techsem MFC26 MFC26 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 26 0,026
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MFC40 MFC40 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 40 0,04
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MFC55 MFC55 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 55 0,055
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MFC70 MFC70 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 70 0,07
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MFC90 MFC90 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 90 0,09
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MFC110 MFC110 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 110 0,11
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MFC135 MFC135 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 135 0,135
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MFC160 MFC160 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 160 0,16
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MFC182 MFC182 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 182 0,182
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MFC200 MFC200 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 2000 to 2500 200 0,2
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MFC250 MFC250 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 2500 250 0,25
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MFC285 MFC285 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 285 0,285
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MFC500 MFC500 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 500 0,5
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MFC570 MFC570 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 570 0,57
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
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Gleichrichter

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Sperrspannung [V] Nennstrom [A] Nennstrom [mA] Produkt Feature Produkt Status
Techsem MDS50 MDS50 Techsem Module Gleichrichter Aktive Komponenten 800 to 1600 50 0,05
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDS75 MDS75 Techsem Module Gleichrichter Aktive Komponenten 800 to 1600 75 0,075
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDS100 MDS100 Techsem Module Gleichrichter Aktive Komponenten 800 to 1600 100 0,1
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDS150 MDS150 Techsem Module Gleichrichter Aktive Komponenten 800 to 1600 150 0,15
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDS200 MDS200 Techsem Module Gleichrichter Aktive Komponenten 800 to 1600 200 0,2
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
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